Trade-off between high-side capability and substrate minority carrier injection in deep sub-micron smart power technologies

In this paper we present an evaluation of trade-off capability between high-side capability and minority carrier injection into substrate in smart power technologies. While high-side capability is easier to accomplish on lightly doped p-type substrates, the suppression of minority carrier injection is extremely poor. Techniques such as active protection, while useful in stand-alone configuration, show significant problems in actual circuits in a product. On the other hand use of a P++ substrate to improve substrate injection suppression poses significant challenges in achieving high-side voltage. We propose a new scheme of integrating deep trench based isolation with P++ substrate to realize an excellent trade-off between the two.