DocumentCode

1953011

Title

Experimental Analysis of the Film Thickness Influence on the Performance of Accumulation-Mode Simox Mosfet´s

Author

Faynot, O. ; Auberton-Herve, A.-J. ; Cristoloveanu, S.

Author_Institution

LETI (CEA-Technologies Avancees), France

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

114

Lastpage

115

Keywords

Annealing; Breakdown voltage; Electrons; MOSFET circuits; Optical films; Performance analysis; Semiconductor films; Temperature; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664820

Filename

664820