• DocumentCode
    1953028
  • Title

    Sub-millisecond energy handling capability improvement of IC power devices with thick copper metallization

  • Author

    Alagi, F. ; Labate, L. ; Andreini, A. ; Contiero, C.

  • Author_Institution
    STMicroelectronics, Cornaredo, Italy
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    Failure energy measurements under rectangular power pulses along with basic modeling allow quantifying the improvement in energy handling capability due to a thick copper layer introduced on top of large area IC MOSFETs, in the sub-millisecond pulse duration range. The improvement is found to be approximately linear with the copper layer thickness, with a rate of about 1.1% μm-1.
  • Keywords
    copper; failure analysis; integrated circuit metallisation; power integrated circuits; IC MOSFET; IC power device; basic modeling; copper layer thickness; failure energy measurement; rectangular power pulse; sub-millisecond energy handling capability; thick copper layer; thick copper metallization; Copper; Energy measurement; Integrated circuit interconnections; Integrated circuit modeling; MOSFETs; Metallization; Power integrated circuits; Pulse measurements; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225275
  • Filename
    1225275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953028