A 28 GHz transimpedance preamplifier with inductive bandwidth enhancement

Author

Montgomery, R.K. ; Feygenson, A. ; Smith, P.R. ; Yadvish, R.D. ; Hamm, R.A. ; Temkin, H.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

423

Lastpage

426

Abstract

We have built a broadband bipolar transimpedance preamplifier exhibiting an effective transimpedance gain of 39 dB Omega with 1.5 dB/sub p-p/ ripple. Using InP/InGaAs composite collector heterojunction bipolar transistors (HBTs) with an f/sub T/ of 120 GHz and f/sub max/ equal to 59 GHz, a 28 GHz circuit bandwidth was demonstrated. The circuit is compact measuring 975*675 mu m/sup 2/. A low power dissipation of only 48.6 mW was achieved for a single supply voltage of 2.7 V.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; preamplifiers; wideband amplifiers; 120 GHz; 2.7 V; 28 GHz; 48.6 mW; 59 GHz; InP-InGaAs; broadband bipolar preamplifier; composite collector HBT; heterojunction bipolar transistors; inductive bandwidth enhancement; single supply voltage; transimpedance preamplifier; Bipolar integrated circuits; Broadband amplifiers; Feedback; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; MMICs; Microwave amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307392

Filename

307392