2D finite elements electro-thermal modeling for IGBT: Uni and multicellular approach

Author

Boubkari, K. EI ; Azzopardi, S. ; Théolier, L. ; Deletage, J.Y. ; Woirgard, E.

Author_Institution

IMS, Univ. de Bordeaux, Talence, France

fYear

2012

fDate

16-18 April 2012

Firstpage

42374

Lastpage

42495

Abstract

In this paper, insulated gate bipolar transistor (IGBT) models in the literature are reviewed, analyzed, and classified in different categories. We compare unicellular and multicellular modeling for the hard-switching between finite elements electro-thermal simulations applied on a silicon power transistor and we show the advantages of multicellular modeling applying on a planar gate non punch through IGBT (PG-NPT-IGBT). It appears that degradation of one or more cells shows intercellular electrical phenomena which can lead to failure of components.

Keywords

finite element analysis; insulated gate bipolar transistors; power transistors; silicon; 2D finite element modeling; PG-NPT-IGBT; electro-thermal modeling; hard-switching; insulated gate bipolar transistor; intercellular electrical phenomena; multicellular modeling; planar gate nonpunch through IGBT; silicon power transistor; unicellular modeling; Analytical models; Computational modeling; Doping; Etching; Insulated gate bipolar transistors; Switches; Thermal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on

Conference_Location

Cascais

Print_ISBN

978-1-4673-1512-8

Type

conf

DOI

10.1109/ESimE.2012.6191757

Filename

6191757