DocumentCode
1953103
Title
Geometry effect on power and ESD capability of LDMOS power devices
Author
Chung, Young ; Besse, Patrice ; Zecri, Michel ; Baird, Bob ; Ida, Richard ; Nolhier, Nicolas ; Bafleur, Marise
fYear
2003
fDate
14-17 April 2003
Firstpage
265
Lastpage
268
Abstract
Energy capability and electrostatic discharge characteristics of an LDMOS device exhibit a strong dependence on both active area and geometry of the device. It results from coupling processes between electrical and thermal entities within various components in the structure. This paper deals with energy and ESD ruggedness details of LDMOS devices in terms of device geometry using experimental and simulation results.
Keywords
MOS integrated circuits; electrostatic discharge; size effect; ESD capability; LDMOS power devices; coupling processes; device geometry; electrical entities; energy capability; geometry effect; thermal entities; Clamps; Couplings; Electrostatic discharge; Energy measurement; Fingers; Geometry; Power measurement; Pulse measurements; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225279
Filename
1225279
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