DocumentCode :
1953116
Title :
Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices
Author :
Jeschke, Sabina ; Pfeiffer, Olivier ; Schulze, Joerg ; Wilke, Marc
Author_Institution :
ZLW/IMA, RWTH Aachen Univ., Aachen, Germany
fYear :
2010
fDate :
10-16 Feb. 2010
Firstpage :
53
Lastpage :
58
Abstract :
This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1-xsSnx-alloys while embedding the needed technology process flow into a virtual knowledge management environment based on a virtual nano electrical lab.
Keywords :
MOSFET; germanium alloys; semiconductor materials; tin alloys; virtual manufacturing; Ge1-xSnx; alloys; crystalline heterostructures; high-speed germanium MOSFET; lateral high-speed devices; strained channels; virtual nanoelectrical lab; Crystallization; Epitaxial growth; Germanium alloys; MOSFETs; Manufacturing; Molecular beam epitaxial growth; Nanoelectronics; Silicon; Space technology; Tin; CVD; Epitaxy; MBE; MOSFET; virtual knowledge spaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum, Nano and Micro Technologies, 2010. ICQNM '10. Fourth International Conference on
Conference_Location :
St. Maarten
Print_ISBN :
978-1-4244-5807-3
Type :
conf
DOI :
10.1109/ICQNM.2010.17
Filename :
5437792
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1953116
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