Title :
A 2 GHz, 60V-class, SOI power LDMOSFET for base station applications
Author :
Lu, Hongfei ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada
Abstract :
This paper describes the design of a SOI LDMOST suitable for 2GHz wireless base station power amplifiers. The device uses a split doping extended drain to achieve an optimized structure in terms of resistance, breakdown voltage and self-heating while minimizing Miller capacitance. Simulation indicates that the device features a cutoff frequency above 6GHz, a power gain of 26dB and a RF power density of 0.4 W per mm of channel width under class A operation.
Keywords :
microwave power amplifiers; power MOSFET; silicon-on-insulator; 26 dB; 2E9 Hz; 60 V; 6E9 Hz; SOI; extended drain; minimized Miller capacitance; optimized structure; power LDMOSFET; power amplifier; silicon-on-insulator; split doping; wireless base station; Base stations; Capacitance; Doping profiles; Frequency; Heat sinks; Heat transfer; Linearity; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225280
