A 2GHz 160V complementary silicon-on-insulator process for high-bandwidth amplification

Author

Letavic, T. ; Albu, R. ; Petruzzello, J. ; Govil, A. ; Simpson, M.

Author_Institution

Philips Res., Briarcliff Manor, NY, USA

fYear

2003

fDate

14-17 April 2003

Firstpage

274

Lastpage

277

Abstract

High resolution display applications require both high-voltage and high-speed to realize low-dissipation video amplification. This paper presents a complementary 160V 2GHz silicon-on-insulator technology where LDMOS device structures are designed utilizing three-dimensional RESURF depletion. These structures exhibit a static power dissipation-switching speed figure-of-merit which is at least a factor-of-two lower than any technology reported-to-date. A 50MHz-bandwidth video amplifier with a 8800V/μs slew-rate and static power dissipation less than 0.8W/channel has been fabricated, validating the intrinsic performance benefit of thin-layer silicon-on-insulator for high-voltage high-bandwidth application.

Keywords

MOS integrated circuits; display instrumentation; silicon-on-insulator; video amplifiers; 160 V; 2E9 Hz; 50E6 Hz; LDMOS device; dissipation-switching speed; high resolution display applications; high-bandwidth amplification; high-voltage application; low-dissipation video amplification; silicon-on-insulator; static power dissipation; three-dimensional RESURF depletion; Displays; Fabrication; High power amplifiers; Insulation; Integrated circuit technology; Medical services; Power dissipation; Resists; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225281

Filename

1225281