DocumentCode
1953199
Title
Numerical study of ion mode saturation in applied-B ion diodes
Author
Desjarlais, M.P. ; Pointon, T.D.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
fYear
1993
fDate
7-9 June 1993
Firstpage
203
Abstract
Summary form only given. The authors have begun a study of ion mode saturation using the 3-D particle-in-cell code QUICKSILVER with the primary aim of understanding the physical mechanisms governing the ion mode saturation in applied-B ion diodes. The practical objective is to discover under what conditions the ion mode will saturate at acceptably low amplitudes. Particular attention is given to the scaling with respect to various diode configuration parameters such as the insulating magnetic field strength, the anode-cathode gap, the anode emission height, and the ion current enhancement over the Child-Langmuir current. Long time scale simulations have also been performed which demonstrate the potential for cycle behavior in the ion mode amplitude. A comparison of the results with experimental data from PBFA II has been made.
Keywords
plasma diodes; 3-D particle-in-cell code; Child-Langmuir current; PBFA II; QUICKSILVER; anode emission height; anode-cathode gap; applied-B ion diodes; cycle behavior; diode configuration parameters; insulating magnetic field strength; ion current enhancement; ion mode amplitude; ion mode saturation; long term scale simulations; low amplitudes; numerical study; Area measurement; Atomic measurements; Diodes; Energy measurement; Ion beams; Laboratories; Magnetic field measurement; Particle beam measurements; Particle beams; Particle measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
Conference_Location
Vancouver, BC, Canada
ISSN
0730-9244
Print_ISBN
0-7803-1360-7
Type
conf
DOI
10.1109/PLASMA.1993.593553
Filename
593553
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