TiAl-based ohmic contacts on p-type SiC

Author

Mysliwiec, Marcin ; Sochacki, Mariusz ; Kisiel, Ryszard ; Guziewicz, Marek ; Wzorek, Marek

Author_Institution

Inst. of Micro- & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland

fYear

2011

fDate

11-15 May 2011

Firstpage

68

Lastpage

72

Abstract

Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900°C ÷ 1000°C. Using scanning electron microscopy and profiler, an investigation of surface morphology of annealed contacts was conducted. The best resistivity of 5.8·10^-5 Ωcm² was attained on 100nm/26nm Al/Ti metallization of 80% at. Al alloy composition annealed at 1000°C for 2 min. Relatively low roughness of 30 nm was observed on trilayer Ti/Al/Ti metallization.

Keywords

aluminium alloys; contact resistance; crystal morphology; electrical resistivity; metallic thin films; metallisation; ohmic contacts; rapid thermal annealing; scanning electron microscopy; semiconductor-metal boundaries; silicon compounds; sputter deposition; surface morphology; surface roughness; titanium alloys; wide band gap semiconductors; SiC; Ti-Al-Ti; TiAl; bilayer thin films; low resistance ohmic contacts; magnetron sputtering; metallization; profiling; rapid thermal annealing; resistivity; roughness; scanning electron microscopy; surface morphology; temperature 900 degC to 1000 degC; time 2 min; trilayer thin films; Annealing; Argon; Conductivity; Metallization; Ohmic contacts; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology (ISSE), 2011 34th International Spring Seminar on

Conference_Location

Tratanska Lomnica

ISSN

2161-2528

Print_ISBN

978-1-4577-2111-3

Type

conf

DOI

10.1109/ISSE.2011.6053552

Filename

6053552