High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

Author

Fukuda, H. ; Uchiyama, A. ; Kuramochi, T. ; Hayashi, T. ; Iwabuchi, T. ; Ono, T. ; Takayashiki, T.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

465

Lastpage

468

Abstract

We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<>

Keywords

EPROM; hot carriers; insulating thin films; integrated memory circuits; oxidation; rapid thermal processing; RTONO technology; SiNO; SiO/sub 2/; erase endurance properties; heavily oxynitrided tunnel oxide films; program endurance properties; scaled flash-type EEPROMs; submicron regime; Dielectric films; EPROM; Hot carriers; Oxidation; Rapid thermal processing; Semiconductor memories;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307402

Filename

307402