Improving the CoolMS™ body-diode switching performance with integrated Schottky contacts

Author

Cheng, Xu ; Liu, Xing-Ming ; Sin, Johnny K. O. ; Kang, Bao-wei

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

2003

fDate

14-17 April 2003

Firstpage

304

Lastpage

307

Abstract

A new approach to improve the CoolMOS™ body-diode reverse-recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the CoolMOS™ structure. Incorporation of the cell-distributed Schottky contacts results in a significant improvement in the body-diode recovery speed. The Medici™ mixed-mode simulation results show an over 58% improvement in the reverse-recovery charge of the body-diode in a 600V CoolMOS™. There is no significant sacrifice to the other device characteristics. This approach provides a good solution to improve the body-diode recovery speed of the CoolMOS™ without using the complicated carrier-lifetime-killing techniques.

Keywords

MOS integrated circuits; Schottky diodes; switching circuits; 600 V; CoolMOS; body-diode switching performance; integrated Schottky contacts; mixed-mode simulation; reverse-recovery speed; Chaos; Doping; Electrons; MOSFET circuits; Medical simulation; Power MOSFET; Power dissipation; Schottky barriers; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225288

Filename

1225288