Vertical N-channel FLIMOSFETs for future 12 V/42 V dual batteries automotive applications

Author

Alves, S. ; Morancho, F. ; Reynès, J-M ; Lopes, B.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2003

fDate

14-17 April 2003

Firstpage

308

Lastpage

311

Abstract

In this paper, new Vertical FLI-MOSFETs dedicated to automotive applications are proposed for the first time: in these devices, only one P Floating Island is introduced in the N^- epitaxial region. In term of "specific on-resistance/breakdown voltage" trade-off, it is shown that the FLIMOSFET exhibits better performance than the conventional VDMOSFET and approaches the well-known "silicon limit". This is due to the strong reduction of access (R_a.S) and drift (R_b.S) resistances, because of the increase in the N^- epitaxial layer doping concentration. In other words, the FLIMOSFET appears to be one of the best Power MOSFET in low voltage applications.

Keywords

automotive electronics; power MOSFET; power electronics; thermal stability; N^- epitaxial region; P Floating Island; automotive applications; doping concentration; drift resistance; dual batteries; low voltage application; power MOSFET; silicon limit; strong access reduction; vertical N-channel FLIMOSFET; Automotive applications; Batteries; Breakdown voltage; Doping; Epitaxial layers; Impedance; Low voltage; MOSFETs; Power electronics; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225289

Filename

1225289