Ge semiconductor devices for cryogenic power electronics: Part III

Author

Ward, R.R. ; Dawson, W.J. ; Zhu, L. ; Kirschman, R.K. ; Mueller, O. ; Patterson, R.L. ; Dickman, J.E. ; Hammoud, A.

Author_Institution

GPD Optoelectronics Corp., Salem, NH, USA

fYear

2003

fDate

14-17 April 2003

Firstpage

321

Lastpage

324

Abstract

We have begun development of Ge power diodes and transistor for operation at cryogenic temperatures, down to ∼ 20 K (∼ -250°C), for use in spacecraft that will encounter low-temperature environments. Ge devices have advantages over Si devices for such deep cryogenic operation. Our initial development has yielded 10-A diodes with low forward voltage and reverse leakage, and reverse breakdown up to ∼ 400 V, as well as insulated-gate FETs, both operating down to ∼ 4 K (∼ minus; 270°C).

Keywords

cryogenic electronics; elemental semiconductors; germanium; insulated gate field effect transistors; power electronics; power field effect transistors; power semiconductor diodes; silicon; 10 A; 20 K; 20 to 250 C; 270 to 270 C; 4 K; 400 V; Ge; Ge power diodes; Ge semiconductor devices; Ge transistor; Si; cryogenic power electronics; cryogenic temperature; low forward voltage; low reverse leakage; low-temperature environments; Breakdown voltage; Cryogenics; FETs; Insulation; Low voltage; Power electronics; Semiconductor devices; Semiconductor diodes; Space vehicles; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225292

Filename

1225292