DocumentCode
1953494
Title
Controllable Highly Sensitive Silicon Hall Element with Improved Reliabylity Under Extreme Conditions
Author
Baranochnikov, M.L. ; Leonov, A.V. ; Mokrushin, A.D. ; Mordkovich, V.N. ; Omelianovskaya, N.I. ; Pazhin, D.M. ; Goncharov, V.P. ; Filatov, M.M.
Author_Institution
Russian Acad. of Sci., Moscow
fYear
2007
fDate
26-29 June 2007
Firstpage
241
Lastpage
242
Abstract
The design features and main characteristics of the new type of magnetic field converters, i.e., the controllable Field Effect Hall Sensor based on the "silicon-on-insulator" (SOI) structure, are considered. The FEHS design features and the use of SOI structures as the design and technological basis of its production imply the uniqueness of electrical and reliability characteristics.
Keywords
Hall effect transducers; magnetic field measurement; magnetic sensors; silicon-on-insulator; SOI; controllable field effect Hall sensor; magnetic field converters; reliability characteristics; sensitive silicon Hall element; silicon-on-insulator; Electrodes; Insulation; Magnetic field measurement; Magnetic materials; Magnetic sensors; Microelectronics; Ohmic contacts; Sensor phenomena and characterization; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility and Electromagnetic Ecology, 2007 7th International Symposium on
Conference_Location
Saint-Petersburg
Print_ISBN
978-1-4244-1270-9
Electronic_ISBN
978-1-4244-1270-9
Type
conf
DOI
10.1109/EMCECO.2007.4371698
Filename
4371698
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