• DocumentCode
    1953589
  • Title

    New trench MOSFET technology for DC-DC converter applications

  • Author

    Ma, Ling ; Amali, Adam ; Kiyawat, Siddharth ; Mirchandani, Ashita ; He, Donald ; Thapar, Naresh ; Sodhi, Ritu ; Spring, Kyle ; Kinzer, Dan

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    354
  • Lastpage
    357
  • Abstract
    ew trench MOSFET technology presented in this paper includes several major technological breakthroughs that significantly improved device performance in DC-DC converter applications. The figure of merit R*AA has reached as low as 12 mOhm.mm2 for a 30 VN SyncFET and R*Qg is only 75 is only 75 mOhm.nC for a 30VN Control FET, one of the lowest reported.
  • Keywords
    DC-DC power convertors; power MOSFET; semiconductor technology; DC-DC converter applications; New trench MOSFET technology; improved device performance; major technological breakthroughs; DC-DC power converters; Energy management; MOSFET circuits; Manufacturing; Power MOSFET; Power system management; Rectifiers; Silicon; Sputter etching; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225300
  • Filename
    1225300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953589