Universal description of hot-carrier-induced interface states in NMOSFETs

Author

Woltjer ; Paulzen, G.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

535

Lastpage

538

Abstract

In NMOSFETs, hot-carrier-induced damage primarily consists of interface states. We present a new model to predict interface state formation over the full gate voltage range. To this end we add an empirical oxide-field dependence to the "lucky-electron" model. Furthermore, we establish the relation between interface states and the degradation of transistor parameters. We checked both new models experimentally with many degradation experiments (including charge pumping) at various stress voltages on NMOSFETs of 0.2-2.0 mu m gate length and 5.5-25 nm oxide thickness with either conventional drain or LDD.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; 0.2 to 2 mum; 5.5 to 25 nm; LDD; NMOSFET; charge pumping; conventional drain; damage; degradation of transistor parameters; empirical oxide-field dependence; hot-carrier-induced interface states; lucky-electron model; stress voltages; transconductance; Hot carriers; Insulated gate FETs; Interface phenomena; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307418

Filename

307418