• DocumentCode
    1953613
  • Title

    The impact of sub-threshold current on ultra high density trench MOSFET for synchronous rectifier application

  • Author

    Sun, Nick X. ; Huang, Alex Q.

  • Author_Institution
    Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    358
  • Lastpage
    361
  • Abstract
    This paper provides a thorough study of body diode reverse recovery issues for low voltage (30V) rated ultra high-density trench MOSFET. Furthermore, a ultra density trench MOSFET structure with Ron_spec (Vgs=5V)=10.4mΣmm2, Qgd= 1.1nC/mm2 and Qoss=2nC/mm2, is proposed.
  • Keywords
    Schottky diodes; Schottky effect; power MOSFET; solid-state rectifiers; switching transients; 30 V; body diode reverse recovery; sub-threshold current impact; synchronous rectifier application; trench MOSFET; ultra high density MOSFET; Capacitors; Circuit simulation; MOSFET circuits; Medical simulation; Nanoscale devices; Power MOSFET; Rectifiers; Schottky diodes; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225301
  • Filename
    1225301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953613