DocumentCode
1953659
Title
Determination of recombination centers in c-Si solar cells from dark I–V characteristics
Author
Cerna, Ladislava ; Benda, Vitezslav ; Machacek, Zdenek
Author_Institution
Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Prague, Czech Republic
fYear
2011
fDate
11-15 May 2011
Firstpage
172
Lastpage
175
Abstract
For photovoltaic cells efficiency is the quality of material key ingredient. Impurities in this material create recombination centers which cut down the effective carrier charge lifetime. The method of dark current measurement, which is described in paper, can be used for dominant impurity determination.
Keywords
electric current measurement; photovoltaic cells; solar cells; c-Si solar cells; carrier charge lifetime; dark I-V characteristics; dark current measurement; impurity determination; photovoltaic cells; recombination center; Current measurement; Energy states; Photovoltaic cells; Temperature; Temperature dependence; Temperature measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2011 34th International Spring Seminar on
Conference_Location
Tratanska Lomnica
ISSN
2161-2528
Print_ISBN
978-1-4577-2111-3
Type
conf
DOI
10.1109/ISSE.2011.6053572
Filename
6053572
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