Self-consistent simulation of hot-carrier damage enhanced gate induced drain leakage

Author

Schwerin, A. ; Bergner, W. ; Jacobs, H.

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

543

Lastpage

546

Abstract

In this work a consistent physical model for gate induced drain leakage (GIDL) and its increase due to oxide charge build-up during hot-carrier (hc) degradation is presented. The model is used to investigate the influence of oxide charge on GIDL characteristics with 2D device simulation. A self-consistent simulation of hc stress is performed. Results for normal drain current reduction and GIDL increase due to oxide charge accumulation are compared to experimental data. An application to drain engineering of a 0.25 mu m device is demonstrated.<>

Keywords

digital simulation; electronic engineering computing; hot carriers; insulated gate field effect transistors; leakage currents; semiconductor device models; 0.25 mum; MOSFET; band to band tunneling; drain current reduction; drain engineering; hot-carrier damage enhanced gate induced drain leakage; hot-carrier degradation; oxide charge accumulation; oxide charge build-up; physical model; self-consistent simulation; Hot carriers; Insulated gate FETs; Leakage currents; Semiconductor device modeling; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307420

Filename

307420