Molecular-dynamics study of single-electron phenomena - impact of charge quantization on 1-100 nm Si-MOSFETs

The impact of the charge quantization (single-electron charging) on 1 to 100 nm MOSFET is studied numerically. Charge quantization is included for the first time in a device simulation by introducing molecular dynamics technique into electron dynamics. This approach is shown to be valid by comparing the results with the experimental characteristics of GaAs 2-DEG single-electron transistors. The simulator predicts a dramatic change of current-voltage characteristics and the operating principle of sub-100-nm Si MOSFETs. The condition for quantized current-voltage characteristics is also clarified.<>