Title :
A physical SiGe-base HBT model for circuit simulation and design
Author :
Hong, G.-B. ; Fossum, J.G. ; Ugajin, M.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A physical compact model for the SiGe-base HBT is presented. The model, implemented in SPICE2, accounts for the carrier transport in the heterostructural base, including explicit dependences on nonuniform doping density as well as energy gap. The model is verified based on HBTs from an aggressive SiGe-base technology, and device and circuit simulations are discussed, giving insight regarding optimal design of the technology.<>
Keywords :
Ge-Si alloys; SPICE; digital simulation; energy gap; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SPICE2; SiGe; SiGe-base HBT model; carrier transport; circuit simulation; device simulations; energy gap; heterostructural base; nonuniform doping density; optimal design; physical compact model; Germanium alloys; Heterojunction bipolar transistors; SPICE; Semiconductor device modeling; Semiconductor materials; Silicon alloys; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307428
