• DocumentCode
    1953990
  • Title

    Silicon oxynitride gate dielectrics for scaled CMOS

  • Author

    Sodini, C.G. ; Krisch, K.S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    617
  • Lastpage
    620
  • Abstract
    In this paper, we present an overview of silicon oxynitride gate dielectrics. We discuss the motivation for using this alternative gate dielectric and describe various techniques by which oxynitrides can be fabricated. The interactions between processing conditions and electrical performance are reviewed, and the tradeoffs between optimization of electrical performance and device reliability are presented. We also discuss some of the reasons for the unique behavior of these dielectrics.<>
  • Keywords
    CMOS integrated circuits; circuit reliability; dielectric thin films; integrated circuit technology; silicon compounds; SiON; device reliability; dielectric behaviour; electrical performance; process scaling; processing conditions; scaled CMOS; silicon oxynitride gate dielectrics; CMOS integrated circuits; Circuit reliability; Dielectric films; Integrated circuit fabrication; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307436
  • Filename
    307436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953990