Title :
Ultrathin furnace reoxidized nitrided oxide gate dielectrics for extreme submicrometer CMOS technology
Author :
Fang, H. ; Krisch, K.S. ; Sodini, C.G. ; Chung, J.E. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The electrical characteristics of ultrathin reoxidized nitrided oxide (ROXNOX) gate dielectrics grown in a low pressure furnace at 850 degrees C have been investigated extensively. Experimental results show that a 1000 degrees C rapid thermal annealing (RTA) process after gate dielectric growth and polysilicon deposition can significantly reduce the levels of fixed charge and interface states in ROXNOX dielectrics. It has been demonstrated that a 45 AA ROXNOX gate dielectric can successfully block boron diffusion into the device channel region over a wide range of dopant activation temperatures and times. Channel mobilities for ROXNOX gate NMOS and PMOS devices are increased after the RTA process due to the improvement in dielectric quality, while the enhanced device reliability under hot carrier stress is maintained.<>
Keywords :
CMOS integrated circuits; VLSI; annealing; circuit reliability; dielectric thin films; integrated circuit technology; interface electron states; rapid thermal processing; 1000 degC; 45 angstrom; 850 degC; NMOS devices; PMOS devices; ROXNOX dielectrics; channel mobilities; device channel region; device reliability; dielectric quality; dopant activation temperatures; electrical characteristics; fixed charge; gate dielectrics; hot carrier stress; interface states; low pressure furnace; rapid thermal annealing; reoxidized nitrided oxide; submicrometer CMOS technology; Annealing; CMOS integrated circuits; Circuit reliability; Dielectric films; Integrated circuit fabrication; Interface phenomena; Rapid thermal processing; Very-large-scale integration;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307437
