DocumentCode
1954020
Title
The effects of furnace N/sub 2/O annealing on MOSFETs
Author
Liu, Z.H. ; Krick, J.T. ; Wann, H.J. ; Ko, P.K. ; Hu, C. ; Cheng, Y.C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
625
Lastpage
628
Abstract
MOSFETs with 70-110 AA thick furnace N/sub 2/O-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N/sub 2/O anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility.<>
Keywords
annealing; carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor technology; 293 K; 70 to 110 angstrom; 77 K; Fowler-Nordheim injection; MOSFETs; N/sub 2/O; channel hot-carrier injection; current drivability; furnace N/sub 2/O annealing; gate oxides; interface properties; normal field mobility; random telegraph noise measurements; Annealing; Charge carrier mobility; Hot carriers; Insulated gate FETs; Semiconductor device fabrication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307438
Filename
307438
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