Title :
A study of the growth kinetics of SiO/sub 2/ in N/sub 2/O(for MOSFETs)
Author :
Soleimani, H.R. ; Philipossian, A. ; Doyle, B.
Author_Institution :
Adv. Semiconductor Dev., Digital Equipment Corp., Hudson, MA, USA
Abstract :
The results of thermal oxidation studies in N/sub 2/O on P
Keywords :
Auger effect; dielectric thin films; elemental semiconductors; insulated gate field effect transistors; oxidation; silicon; silicon compounds; 1.0 eV; 145 angstrom; 160 angstrom; AES data; MOSFETs; N/sub 2/O oxidation rate; Si-SiO/sub 2/; Si/SiO/sub 2/ interface; accelerated growth phase; activation energy; dielectric thickness saturation; dry oxygen oxide thicknesses; empirical model; exposure time; growth characteristics; growth kinetics; linear rate constant; rate retarding nitrogen species; thermal oxidation studies; Dielectric films; Insulated gate FETs; Oxidation; Silicon; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307439
