DocumentCode

1954100

Title

Front-Channel Hot-Carrier Effect on the Drain-Source Breakdown Voltage in Thin-Film Soi/nmosfet´s

Author

Zhang, Binglong ; Ma, T.P.

Author_Institution

Yale University Center for Microelectronic Materials & Structures, and Department of Electrical Engineering, New Haven, Connecticut

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

126

Lastpage

127

Keywords

Breakdown voltage; Electron traps; Hot carrier effects; Hot carriers; Low voltage; MOSFET circuits; Spontaneous emission; Stress; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664825

Filename

664825