Title :
Extremely narrow spectral widths from resonant cavity light-emitting diodes (RCLEDs) suitable for wavelength-division multiplexing at 1.3 mu m and 1.55 mu m
Author :
Hunt, N.E.J. ; Schubert, E.F. ; Logan, R.A. ; Zydzik, G.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Resonant cavity light emitting diodes (RCLEDs) operating at 1.3 mu m and 1.5 mu m have been fabricated. The InGaAsP quantum well active region is positioned in the antinode of the optical resonance which is set up between an InP-InGaAsP distributed Bragg reflector (DBR) and a silver mirror. The resulting spontaneous emission through the substrate exhibits an enhancement of spectral power density and a reduction in linewidth by more than an order of magnitude compared to conventional devices. Such devices would be suitable for use in wavelength division multiplexing applications.<>
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; light reflection; mirrors; optical communication equipment; optical resonators; semiconductor quantum wells; spectral line breadth; wavelength division multiplexing; 1.3 micron; 1.55 micron; Ag mirror; DBR; InGaAsP quantum well active region; InP-InGaAsP; WDM applications; distributed Bragg reflector; light-emitting diodes; linewidth reduction; narrow spectral widths; optical resonance; resonant cavity LED; spontaneous emission; wavelength-division multiplexing; Cavity resonators; Gallium compounds; Indium compounds; Light-emitting diodes; Mirrors; Optical communication equipment; Optical reflection; Optical resonators; Quantum wells; Wavelength division multiplexing;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307444
