Title :
Multi-terminal light emitting logic device electrically reprogrammable between OR and NAND functions
Author :
Mastrapasqua, M. ; Luryi, S. ; Belenky, G.L. ; Garbinski, P.A. ; Cho, A.Y. ; Sivco, D.L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A monolithic multi-terminal logic device that functions both optically and electrically as an "ORNAND" gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in MBE-grown InGaAs-InAlAs heterostructure. Excellent performance is obtained at room temperature. The output current and optical power both exhibit OR and NAND functions of voltages of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; indium compounds; light emitting devices; logic gates; molecular beam epitaxial growth; optical logic; InGaAs-InAlAs; MBE-grown heterostructure; NAND function; OR function; ORNAND gate; complementary collector layer; electrically reprogrammable device; hot electron transfer; light emitting logic device; monolithic multiterminal logic device; Aluminum compounds; Epitaxial growth; Gallium compounds; Hot carriers; Indium compounds; Optical logic devices;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307447
