DocumentCode
1954237
Title
Fabrication of TFTs using plasma CVD poly-Si at very low temperature
Author
Mohri, M. ; Kakinuma, H. ; Tsuruoka, T.
Author_Institution
Res. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
673
Lastpage
676
Abstract
Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<>
Keywords
annealing; carrier mobility; elemental semiconductors; plasma CVD; silicon; thin film transistors; 300 degC; Si; TFTs; annealing; crystallinity; field effect mobility; off current; plasma CVD polysilicon; surface morphology; thickness dependance; top gate coplanar transistors; Annealing; Charge carrier mobility; Plasma CVD; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307450
Filename
307450
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