Title :
Fabrication of TFTs using plasma CVD poly-Si at very low temperature
Author :
Mohri, M. ; Kakinuma, H. ; Tsuruoka, T.
Author_Institution :
Res. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<>
Keywords :
annealing; carrier mobility; elemental semiconductors; plasma CVD; silicon; thin film transistors; 300 degC; Si; TFTs; annealing; crystallinity; field effect mobility; off current; plasma CVD polysilicon; surface morphology; thickness dependance; top gate coplanar transistors; Annealing; Charge carrier mobility; Plasma CVD; Silicon; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307450
