Title :
Modification and characterization of insulator-semiconductor interface in a.c. thin film electroluminescent display devices
Author :
Britton, J.D. ; Traylor, M.E. ; Bhaskaran, S. ; McClure, J.C. ; Singh, V.P.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA
Abstract :
A technique for modifying the characteristics of a.c. thin film electroluminescent (ACTFEL) display devices by incorporating a thin (1-5 nm) aluminum layer at the phosphor-dielectric interfaces was investigated. This modification resulted in a reduction in the threshold voltage. The change in the effective density of states and the energy levels of these interface states was estimated by calculating the luminescence-time characterization of the modified and the control ACTFEL devices and matching them against the measured characteristics.<>
Keywords :
electroluminescent displays; electronic density of states; flat panel displays; semiconductor-insulator boundaries; AC thin film electroluminescent display devices; ACTFEL; effective density of states; energy levels; flat panel displays; insulator-semiconductor interface; luminescence-time characterization; threshold voltage; Displays; Electroluminescent devices; Flat panel displays; Semiconductor-insulator interfaces;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307453
