Modification and characterization of insulator-semiconductor interface in a.c. thin film electroluminescent display devices

Author

Britton, J.D. ; Traylor, M.E. ; Bhaskaran, S. ; McClure, J.C. ; Singh, V.P.

Author_Institution

Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

689

Lastpage

692

Abstract

A technique for modifying the characteristics of a.c. thin film electroluminescent (ACTFEL) display devices by incorporating a thin (1-5 nm) aluminum layer at the phosphor-dielectric interfaces was investigated. This modification resulted in a reduction in the threshold voltage. The change in the effective density of states and the energy levels of these interface states was estimated by calculating the luminescence-time characterization of the modified and the control ACTFEL devices and matching them against the measured characteristics.<>

Keywords

electroluminescent displays; electronic density of states; flat panel displays; semiconductor-insulator boundaries; AC thin film electroluminescent display devices; ACTFEL; effective density of states; energy levels; flat panel displays; insulator-semiconductor interface; luminescence-time characterization; threshold voltage; Displays; Electroluminescent devices; Flat panel displays; Semiconductor-insulator interfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307453

Filename

307453