DocumentCode :
1954337
Title :
Dependence of Fully Depleted Soimosfet Breakdown Voltage on Film Thickness and Channel Length
Author :
Kistler, Neal ; Ver Ploeg, Eric ; Woo, Jason ; Plummer, James
Author_Institution :
University of California, Los Angeles
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
128
Lastpage :
129
Keywords :
Bipolar transistors; Electric variables measurement; Electrical resistance measurement; Impact ionization; Leg; MOSFET circuits; Semiconductor films; Silicon devices; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664826
Filename :
664826
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1954337
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