New experimental findings on hot carrier transport under velocity saturation regime in Si MOSFETs

Author

Takagi, S. ; Toriumi, A.

Author_Institution

ULSI Res. Center, Toshiba Corp., Kawasaki, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

711

Lastpage

714

Abstract

The carrier transport properties under high field have been studied in Si MOSFETs experimentally from the following two points of view; velocity saturation and impact ionization. The electron and hole velocities in the inversion-layer were measured as a function of tangential electric field using high-resistive gate MOSFETs. It has been found that the saturation velocity is dependent on the surface carrier concentration. The impact ionization rate was studied as a parameter of the length of the pinch-off region in MOSFETs. The suppression of the ionization rate and the enhancement of anisotropic impact ionization have been simultaneously observed at 81 K in the MOSFETs with the shorter length of pinch-off region. The non-stationary transport of hot carriers in the pinch-off region is responsible for these phenomena.<>

Keywords

carrier mobility; elemental semiconductors; hot carriers; impact ionisation; insulated gate field effect transistors; inversion layers; silicon; MOSFETs; Si; electron velocity; high field; hole velocity; hot carrier transport; impact ionization; inversion-layer; nonstationary transport; pinch-off region; surface carrier concentration; tangential electric field; velocity saturation regime; Charge carrier mobility; Hot carriers; Impact ionization; Insulated gate FETs; Inversion layers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307458

Filename

307458