DocumentCode :
19544
Title :
Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches
Author :
Cheng Ma ; Wei Shi ; Mengxia Li ; Huaimeng Gui ; Nana Hao ; Pengbo Xue
Author_Institution :
Dept. of Appl. Phys., Xi´an Univ. of Technol., Xi´an, China
Volume :
61
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
2432
Lastpage :
2436
Abstract :
The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of the devices. This paper presents a study on the influence of the current filament over the material properties and output characteristics of the GaAs PCSS. The working principle of the current filaments has been analyzed and it is shown that the performance of GaAs PCSS degrades due to the heating effects of the current filaments. It is observed that the heating effect of current filament reduces the dark resistivity of the GaAs material; furthermore, it gradually damages electrode of PCSS, leading to the breakdown of PCSS. This paper presents the relationship between the turn-ON process and damage of the PCSS.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; GaAs; current filaments; heating effects; photoconductive semiconductor switches; Conductivity; Electric breakdown; Electrodes; Gallium arsenide; Heating; Optical switches; Current filaments; EL2 level; gallium arsenide (GaAs); semiconductor; semiconductor.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2323052
Filename :
6820753
Link To Document :
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