Title :
Modeling hot carrier reliability of MOSFET: what is necessary and what is possible?
Author_Institution :
Siemens Components Inc., Iselin, NJ, USA
Abstract :
The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<>
Keywords :
digital simulation; electron traps; hole traps; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; DC hot electron device degradation; MOSFET; carrier injection; detrapping; device field; drift diffusion approximation; gate oxide; hot carrier reliability; interface states; modeling; oxide charges; self-consistent calculation; simulation tool; trapping; Charge carrier lifetime; Insulated gate FETs; Interface phenomena; Reliability; Semiconductor device modeling; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307459
