Title :
Monte Carlo study of electron transport in silicon inversion layers
Author :
Fischetti, M.V. ; Laux, S.E.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Electron transport in Si inversion layers at room temperature is studied using the self-consistent Poisson-Monte Carlo program DAMOCLES coupled to the one-dimensional Schrodinger equation. Band nonparabolicity, anisotropy of the electron-acoustic phonon interaction, multisubband screening, interface optical modes, and Coulomb and surface-roughness scattering are included in order to assess how well we can explain available experimental data. The results are only moderately satisfactory: while we provide an improvement upon previous theoretical studies, we still overestimate the ohmic field-effect mobility by about 20% at medium electron densities ( approximately=10/sup 12/cm/sup -2/) and obtain a high-field saturated velocity approaching the bulk value, despite experimental evidence for lower values.<>
Keywords :
Monte Carlo methods; Schrodinger equation; carrier density; carrier mobility; electronic engineering computing; elemental semiconductors; semiconductor device models; silicon; surface scattering; Coulomb scattering; DAMOCLES; MOSFET; Monte Carlo study; Si; Si inversion layers; band nonparabolicity; electron transport; electron-acoustic phonon interaction; high-field saturated velocity; interface optical modes; multisubband screening; ohmic field-effect mobility; one-dimensional Schrodinger equation; self-consistent Poisson-Monte Carlo program; surface-roughness scattering; Charge carrier density; Charge carrier mobility; Monte Carlo methods; Partial differential equations; Semiconductor device modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307460
