Title :
Analysis of uniform degradation in n-MOSFETS
Author :
Selmi, L. ; Fiegna, C. ; Sangiorgi, E. ; Bez, R. ; Ricco, B.
Author_Institution :
Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<>
Keywords :
hot carriers; insulated gate field effect transistors; iterative methods; semiconductor device models; simulation; NMOSFET; Si-SiO/sub 2/; Si-SiO/sub 2/ energy barrier; carrier energy; energy distribution; hot electrons; n-MOSFETS; numerical model; one dimensional MOS structures; optically generated substrate hot electrons; uniform degradation; Hot carriers; Insulated gate FETs; Iterative methods; Semiconductor device modeling; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307462
