DocumentCode
1954548
Title
Coupled thermal-fully hydrodynamic simulation of InP-based HBTs
Author
Benvenuti, A. ; Ghione, G. ; Pinto, M.R. ; Coughran, W.M., Jr. ; Schryer, N.L.
Author_Institution
Dipartimento di Elettronica, Politecnico di Torino, Italy
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
737
Lastpage
740
Abstract
We analyzed the self-consistent thermal and electrical behavior of InP-GaInAs heterojunction bipolar transistors (HBTs) with a coupled 1D thermal-fully hydrodynamic model, discretized with an improved upwinding scheme. Taking advantage of the flexibility allowed by our software approach, the role of convective terms and thermal effects is demonstrated by comparison with previous models.<>
Keywords
III-V semiconductors; digital simulation; electronic engineering computing; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; InP-GaInAs; InP-based HBTs; coupled thermal-fully hydrodynamic simulation; heterojunction bipolar transistors; thermal effects; upwinding scheme; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Semiconductor device modeling; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307464
Filename
307464
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