DocumentCode :
1954600
Title :
Electron bombarded semiconductor gain in CVD diamond
Author :
Lin, B.-Y. ; Beetz, C.P. ; Winn, D.R. ; Segall, K.
Author_Institution :
Adv. Technol. Mater. Inc., Danbury, CT, USA
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
747
Lastpage :
750
Abstract :
Diamond films with metal electrodes were evaluated for use as an electron bombarded semiconductor (EBS) target gain medium for hybrid vacuum-semiconductor amplifier applications, such as hybrid photomultiplier tubes (PMT) or hybrid vacuum tube amplifiers. In this report we present: (1) measurements of electron-bombarded semiconductor (EBS) gain in synthetic CVD diamond thin films, (2) robustness characteristics of the diamond EBS detectors to high temperature cesiation, and (3) effects of electron beam damage. We conclude that diamond is a superior EBS material for high temperature/high power bandwidth applications.<>
Keywords :
CVD coatings; amplification; diamond; electron beam effects; electron bombarded semiconductor devices; photomultipliers; semiconductor thin films; vacuum tubes; C; diamond EBS detectors; electron beam damage; electron bombarded semiconductor target gain medium; hybrid photomultiplier tubes; hybrid vacuum tube amplifiers; hybrid vacuum-semiconductor amplifier applications; synthetic CVD diamond thin films; CVD; Coatings; Diamond; Electron radiation effects; Electron tubes; Electron-beam semiconductor devices; Photomultipliers; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307466
Filename :
307466
Link To Document :
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