Title :
In-situ cleaning for highly reliable 1.3-/spl mu/m InGaAlAs buried heterostructure laser
Author :
Sato, H. ; Tsuchiya, Takao ; Kitatani, T. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Takahashi, N. ; Nakahara, K. ; Aoki, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
An in-situ cleaned and regrown 1.3-/spl mu/m InGaAIAs buried heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 2000-hour aging test.
Keywords :
III-V semiconductors; ageing; cleaning; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor device reliability; semiconductor growth; semiconductor lasers; 1.3 mum; 2000 hour; InGaAlAs; InGaAlAs laser; aging test; buried heterostructure laser; in-situ cleaning; laser fabrication;
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
