Title :
AC characterization and modelling of the Ge/sub x/Si/sub 1-x//Si BICFET
Author :
Mierzwinski, M.E. ; Plummer, J.D. ; Croke, E.T. ; Iyer, S.S. ; Harrell, M.J.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We present the first RF measurements of the Ge/sub x/Si/sub 1-x//Si Bipolar Inversion Channel Field Effect Transistor demonstrating the potential of the device for high-speed applications. Molecular Beam Epitaxially-grown Ge/sub x/Si/sub 1-x//Si devices fabricated with 4 micron emitter widths demonstrated de-embedded f/sub t/´s of 28 GHz. The lateral delay due to the charging of the inversion base presently limits the high-speed performance as does the conventional collector-base capacitance of the contact junctions. DC current gains above 3000 have been achieved at room temperature; the gain improves to 3500 at 10 K.<>
Keywords :
Ge-Si alloys; elemental semiconductors; field effect transistors; inversion layers; molecular beam epitaxial growth; semiconductor device models; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; solid-state microwave devices; 10 K; 28 GHz; 293 K; 4 micron; AC characterization; DC current gains; Ge/sub x/Si/sub 1-x//Si BICFET; GeSi-Si; RF measurements; bipolar inversion channel field effect transistor; collector-base capacitance; de-embedded f/sub t/; emitter widths; high-speed applications; inversion base; lateral delay; modelling; molecular beam epitaxial growth; Epitaxial growth; FETs; Germanium alloys; Inversion layers; Microwave devices; Semiconductor device modeling; Semiconductor device testing; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor materials; Silicon; Silicon alloys;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307472
