DocumentCode
1954751
Title
Single electron charging effect in coupled quantum dots of a Si-MOSFET
Author
Matsuoka, H. ; Ichiguchi, T. ; Yoshimura, T. ; Takeda, E.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
781
Lastpage
784
Abstract
Single electron transport was studied by using a designed mesoscopic structure in a Si-MOSFET with a dual-gate structure. Both the electron concentration and the potential barrier height in the narrow channel can be controlled by the field effect. The successive transformation of the quantum wire into coupled quantum dots was achieved in this device. The measured transport properties were consistent with the Coulomb blockade of the single electron tunneling.<>
Keywords
elemental semiconductors; insulated gate field effect transistors; mesoscopic systems; semiconductor quantum dots; silicon; tunnelling; Coulomb blockade; Si; Si-MOSFET; coupled quantum dots; dual-gate structure; electron concentration; field effect; mesoscopic structure; potential barrier height; quantum wire; single electron charging effect; single electron tunneling; transport properties; Insulated gate FETs; Quantum dots; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307474
Filename
307474
Link To Document