Title :
Single electron charging effect in coupled quantum dots of a Si-MOSFET
Author :
Matsuoka, H. ; Ichiguchi, T. ; Yoshimura, T. ; Takeda, E.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Single electron transport was studied by using a designed mesoscopic structure in a Si-MOSFET with a dual-gate structure. Both the electron concentration and the potential barrier height in the narrow channel can be controlled by the field effect. The successive transformation of the quantum wire into coupled quantum dots was achieved in this device. The measured transport properties were consistent with the Coulomb blockade of the single electron tunneling.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; mesoscopic systems; semiconductor quantum dots; silicon; tunnelling; Coulomb blockade; Si; Si-MOSFET; coupled quantum dots; dual-gate structure; electron concentration; field effect; mesoscopic structure; potential barrier height; quantum wire; single electron charging effect; single electron tunneling; transport properties; Insulated gate FETs; Quantum dots; Silicon; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307474
