Hot electron induced hydrogen compensation of boron doped silicon resulting from emitter-base breakdown

Author

Dunkley, J. ; Ganschow, G. ; Hannaman ; Patterson, J. ; Willard, S. ; Gopi, P.

Author_Institution

Silicon Syst. Inc., Tustin, CA, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

785

Lastpage

788

Abstract

Large positive drifts in the emitter-base breakdown voltage (BVebo) by as much as 1.5 volts have been observed on devices utilizing blanket deposited silicon nitride layers. The large magnitude of the drift has been explained by the electrical neutralization of boron by the formation of boron-hydrogen bonds when the emitter-base junction is avalanched. The blanket nitride layer acts as a source of hydrogen as well as a barrier which traps hydrogen in the oxide under the nitride layer.<>

Keywords

bipolar transistors; boron; dielectric thin films; electric breakdown of solids; elemental semiconductors; hot carriers; nitridation; silicon; silicon compounds; 1.5 V; Si/sub 3/N/sub 4/; Si:B; blanket deposited silicon nitride layers; boron-hydrogen bonds; capacitor dielectric; electrical neutralization; emitter-base breakdown; hot electron induced hydrogen compensation; npn transistors; positive drifts; Bipolar transistors; Boron; Dielectric films; Electric breakdown; Hot carriers; Silicon; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307475

Filename

307475