Thermally robust TiSi/sub 2/ on heavily doped polycrystalline silicon over severe topography

Author

Perera, A.H. ; Lage, C. ; Sitaram, A.R. ; Woo, M.P. ; Tatti, S.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

833

Lastpage

836

Abstract

Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<>

Keywords

annealing; etching; heavily doped semiconductors; integrated circuit technology; metallisation; silicon; sputter deposition; sputtered coatings; surface topography; titanium compounds; 900 C; O/sub 2/; Si; Ti; Ti deposition; TiSi/sub 2/-Si; anneal; fabrication process; heavily doped polycrystalline Si; severe topography; thermally robust TiSi/sub 2/; Annealing; Etching; Integrated circuit fabrication; Metallization; Silicon; Sputtering; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307486

Filename

307486