Title :
Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Author :
Weisser, S. ; Esquivias, I. ; Ralston, J.D. ; Rosenzweig, J. ; Schonfelder, A. ; Larkins, E.C. ; Fleissner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
The intrinsic modulation response of semiconductor lasers is dependent on the differential gain, which determines the relaxation frequency for a given current density, and the damping factor, K, which limits the ultimate 3-dB bandwidth. We investigated the dependence of both parameters in GaAs/AlGaAs and pseudomorphic In/sub y/Ga/sub 1-y/As/GaAs multiple-quantum-well lasers on the threshold gain by measuring the relative intensity noise power spectra of lasers with different facet reflectivities and cavity lengths.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical modulation; reflectivity; semiconductor device noise; semiconductor lasers; 3-dB bandwidth; GaAs-AlGaAs; InGaAs-GaAs; K-factor; cavity lengths; current density; damping factor; differential gain; facet reflectivity; high-speed MQW lasers; intrinsic modulation response; multiple-quantum-well lasers; pseudomorphic In/sub y/Ga/sub 1-y/As/GaAs; relative intensity noise power spectra; relaxation frequency; semiconductor lasers; threshold gain; Aluminum compounds; Gallium compounds; Indium compounds; Laser resonators; Optical modulation; Optical reflection; Semiconductor device noise; Semiconductor lasers;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307493
