Title :
AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure
Author :
Kidoguchi, I. ; Kamiyama, S. ; Mannoh, M. ; Hoshina, J. ; Ohta, H. ; Ishibashi, A. ; Ban, Y. ; Ohnaka, K.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser frequency stability; optical losses; optical waveguides; semiconductor lasers; 43 percent; AlGaInP; AlGaInP visible laser diode; differential quantum efficiency; facet coating; fundamental-transverse-mode stability; lateral leaky waveguide structure; propagation loss; Aluminum compounds; Gallium compounds; Indium compounds; Laser stability; Optical losses; Optical waveguides; Semiconductor lasers;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307495
