Title :
New Gate Electrodes for Fully-Depleted Soi/cmos; Tin and Poly Si-Ge
Author :
Hwang, Jeong-mo ; Pollack, Gordon
Author_Institution :
Semiconductor Process & Design Center, Texas Instruments Inc.
Keywords :
CMOS technology; Capacitive sensors; Electrodes; Implants; Instruments; Oxidation; Process design; Sputter etching; Threshold voltage; Tin;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664835
