1/f noise in MOSFETs with ultrathin gate dielectrics

Author

Gross, B.J. ; Sodini, C.G.

Author_Institution

Technol. Products Div., IBM Corp., Essex Junction, VT, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

881

Lastpage

884

Abstract

A model of 1/f noise which accounts for the full temperature and bias dependence of the noise power spectral density (PSD) of both N- and P-channel MOSFETs in the linear region is presented. This model is significantly different from past work in that the 1/f spectral dependence of the noise is shown to arise from traps uniformly distributed in activation energy, rather than from traps uniformly distributed in depth into the oxide. The model applies results of characterization of single-electron traps to demonstrate i) the importance of the temperature-activated capture and emission rates of near-interface oxide traps and ii) the importance of induced mobility fluctuations, on the 1/f noise present in the channel of the MOS device.<>

Keywords

carrier mobility; electron traps; insulated gate field effect transistors; random noise; semiconductor device models; semiconductor device noise; 1/f noise; MOSFETs; N-channel devices; P-channel devices; activation energy; bias dependence; induced mobility fluctuations; linear region; near-interface oxide traps; noise power spectral density; single-electron traps; temperature dependence; ultrathin gate dielectrics; Charge carrier lifetime; Charge carrier mobility; Insulated gate FETs; Random noise; Semiconductor device modeling; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307497

Filename

307497