Title :
Reverse Elevated Source/Drain (RESD) MOSFET for deep submicron CMOS
Author :
Pfiester, J.R. ; Woo, M. ; Fitch, J.T. ; Schmidt, J.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
A new Reverse Elevated Source/Drain (RESD) CMOS process has been developed as part of a deep submicron CMOS technology featuring ultra-shallow source/drain junctions with reversed (with respect to epi formation) phosphorus LDD implantation. This new structure utilizes disposable nitride spacers to define the selective silicon offset from the gate edge prior to LDD implantation. Since the LDD junctions are not exposed to the high temperature prebake and deposition conditions, shallow phosphorus junctions provide improved short-channel behavior while maintaining good hot-carrier protection.<>
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; CMOS technology; deep submicron CMOS; disposable nitride spacers; gate edge; hot-carrier protection; reverse elevated source/drain MOSFET; reversed phosphorus LDD implantation; selective silicon offset; short-channel behavior; ultra-shallow source/drain junctions; CMOS integrated circuits; Insulated gate FETs; Integrated circuit fabrication; Ion implantation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307498
